scholarly journals Binding Energy of the Ground and First Few Excited States of a Shallow-Donor Impurity in Rectangular-Cross-Sectional Area GaAs Quantum-Well Wires under Applied Electric Field

1998 ◽  
Vol 210 (2) ◽  
pp. 731-736 ◽  
Author(s):  
A. Montes ◽  
C.A. Duque ◽  
N. Porras-Montenegro
Keyword(s):  
Binding Energy ◽  
Electric Field ◽  
Quantum Well ◽  
Excited States ◽  
Applied Electric Field ◽  
Shallow Donor ◽  
Sectional Area ◽  
Donor Impurity ◽  
Cross Sectional ◽  
Quantum Well Wires

OPTICAL INTERSUBBAND TRANSITIONS AND BINDING ENERGIES OF DONOR IMPURITIES IN Ga1-xInxNyAs1-y/GaAs/Al0.3Ga0.7As QUANTUM WELL UNDER THE ELECTRIC FIELD

2012 ◽  
Vol 26 (06) ◽  
pp. 1250013 ◽  
Author(s):  
F. UNGAN ◽  
U. YESILGUL ◽  
E. KASAPOGLU ◽  
H. SARI ◽  
I. SOKMEN
Keyword(s):  
Binding Energy ◽  
Optical Absorption ◽  
Electric Field ◽  
Quantum Well ◽  
Applied Electric Field ◽  
Shallow Donor ◽  
Binding Energies ◽  
Intersubband Transitions ◽  
Mass Approximation ◽  
Intersubband Optical Absorption

The effects of nitrogen and indium mole concentration on the intersubband optical absorption for (1–2) transition and the binding energy of the shallow-donor impurities in a Ga 1-x In x N y As 1-y/ GaAs / Al 0.3 Ga 0.7 As quantum well under the electric field is theoretically calculated within the framework of the effective-mass approximation. Results are obtained for several concentrations of nitrogen and indium, and the applied electric field. The numerical results show that the intersubband transitions and the impurity binding energy strongly depend on the nitrogen and indium concentrations.

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